11 GHZ ULTRAWIDE-BANDWIDTH MONOLITHIC PHOTORECEIVER USING INGAAS PIN PD AND INALAS/INGAAS HEMTS

被引：7

作者：

AKAHORI, Y ^{[1
]}

IKEDA, M ^{[1
]}

KOHZEN, A ^{[1
]}

AKATSU, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, TRANSMISS SYST LABS, YOKOSUKA, KANAGAWA 23803, JAPAN

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 03期

关键词：

OPTICAL RECEIVERS; PHOTODIODES; HIGH ELECTRON MOBILITY TRANSISTORS;

D O I：

10.1049/el:19940147

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A very-wide-bandwidth long-wavelength monolithically integrated photoreceiver is presented which comprises an InGaAs pin PD and a transimpedance amplifier. The receiver uses epilayers grown by one-step MOVPE. The InGaAs channel high-electron-mobility field effect transistor (HEMT) employs an Si planar-doped carrier supplying layer to obtain larger transconductance and uniform threshold voltage. The 0.5 mum gate length is used for HEMTs to enhance the speed of operation. This receiver shows a very wide bandwidth of 11 GHz, and opened eye for a 15 Gbit/s NRZ signal. This is the first demonstration of a long-wavelength monolithic photoreceiver receiving a 15Gbit/s light signal.

引用

页码：267 / 268

页数：2

共 6 条

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