10-GB/S HIGH-SPEED MONOLITHICALLY INTEGRATED PHOTORECEIVER USING INGAAS P-I-N PD AND PLANAR DOPED INALAS/INGAAS HEMTS

A long wavelength monolithically integrated photoreceiver which is capable of operation at a 10-Gb/s NRZ light signal is described. The photoreceiver was fabricated using Si-planar-doping technique to enhance the uniformity and transconductance of HEMT's and also Be-ion implantation technique. The circuit consists of a p-i-n PD, a transimpedance amplifier, and a buffer stage to provide output impedance of 50-OMEGA. The photoreceiver demonstrated a 3-dB down bandwidth of 8 GHz and the responsivity of 158 V / W. The measured input noise current was 20 pA / square-root Hz and the calculated sensitivity at 10-Gb / s NRZ signal was -16.5 dBm. The receiver is the first monolithically integrated p-i-n-HEMT receiver capable of receiving 10-Gb / s NRZ light signal.