EXCELLENT UNIFORMITY OF THRESHOLD VOLTAGE OF SI PLANAR-DOPED ALLNAS/GAINAS HETEROINTERFACE FIELD-EFFECT TRANSISTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：6

作者：

ISHIKAWA, H

SHIBATA, H

KAMADA, M

机构：

[1] SONY Corporation Research Center, Hodogaya-ku, Yokohama 240, 174, Fujitsuka-cho

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 05期

关键词：

D O I：

10.1063/1.103666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si planar-doped AlInAs layers grown by metalorganic chemical vapor deposition (MOCVD) showed an excellent uniformity in doping concentration. It was caused by the saturation of the doping concentration in the high doping region. Applying this planar doping to the AlInAs/GaInAs heterointerface field-effect transistor (HIFET), the variation of the threshold voltage (V th) due to unevenness of distribution of doping concentration was reduced to values below 50 mV over a 2-in.-diam wafer.

引用

页码：461 / 462

页数：2

共 5 条

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[2]

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[5]

Zrenner A., 1987, 18th International Conference on the Physics of Semiconductors, P1523

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