MOCVD GROWTH OF SELECTIVELY DOPED ALINAS/GAINAS HETEROSTRUCTURES

被引：18

作者：

MORI, Y

KAMADA, M

机构：

[1] Sony Corp, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90636-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：892 / 899

页数：8

共 12 条

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[5] OHMIC CONTACTS ON SELECTIVELY DOPED ALINAS/GAINAS HETEROSTRUCTURES USING NI, AUGE AND AU [J].

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[6] MOCVD GROWTH OF SELECTIVELY DOPED ALLNAS/GALNAS HETEROSTRUCTURES AND ITS APPLICATION TO HIFETS (HETEROINTERFACE FETS) [J].

KAMADA, M ;

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[7]

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[10] TEG IN LP-MO CVD GA0.47IN0.53AS-INP SUPER-LATTICE [J].

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