MONOLITHICALLY INTEGRATED IN0.53GA0.47AS/IN0.52AL0.48AS (ON INP) MSM HFET PHOTORECEIVER GROWN BY MBE

High speed results on In0.53Ga0.47As/In0.52Al0.48As (on InP) planar doped heterojunction-FETs and 1.3-1.6 fim wavelength-compatible metal-semiconductor-metal photo-detector devices fabricated from a vertically stacked device design with the FET overlaying the detector structure are reported. A cut-off frequency for unity current gain of 30 GHz was achieved with a 1 /mi gatelength. The photo-detector at 7 V bias had a photoresponse and dark current of 0.48 A/W and 24 nA, respectively. At 10 V bias the FWHM of the impulse response was 65 ps. A simple near-planar monolithically integrated photoreceiver was successfully fabricated requiring no special processing or regrowth steps. © 1990, The Institution of Electrical Engineers. All rights reserved.