A COMBINED PLASMA-SURFACE MODEL FOR THE DEPOSITION OF C-H FILMS FROM A METHANE PLASMA

The deposition of C:H layers by an electron-cyclotron-resonance plasma from methane was investigated. C:H was deposited at a methane pressure of 1.6 Pa and a substrate temperature between room temperature and 700 K. The film composition, morphology, and structure were investigated by high-energy ion beam analysis and scanning electron microscopy. A combined plasma-surface model for thin-film-deposition is proposed, which includes the electron-induced dissociation of methane in the plasma and a growth model. The dominant reactions for film growth are the adsorption of the radical CH3, the direct incorporation of the ions, and the etching reactions with atomic hydrogen from the plasma. A consistent description for the deposition of hydrocarbon layers emerges. It compares favorably with measurements on the temperature dependence of the film growth and the influence of variable gas flow through the reactor on the growth rate and the film morphology.