QUANTITATIVE ANALYSIS OF GaAlAs COMPOSITION AND ITS DOPANT CONCENTRATION BY Cs CLUSTER ION MASS SPECTROMETRY

被引：3

作者：

Tomita, Mitsuhiro ^{[1
]}

Honma, Yoshinori ^{[1
]}

Inaba, Michihiko ^{[1
]}

机构：

[1] Toshiba Corp, Ctr Res & Dev, Saiwai Ku, Kawasaki, Kanagawa 210, Japan

来源：

ANALYTICAL SCIENCES | 1991年 / 7卷

关键词：

SIMS; GaAlAs; Mg; Cs cluster ion;

D O I：

10.2116/analsci.7.Supple_447

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Quantitative analysis of GaAlAs composition and its dopant (Mg) concentration has been developed using Cs cluster ions for SIMS (secondary ion mass spectrometry). The ratio of AlCs+ ion intensity to an AsCs+ ion increased linearly, and the relative sensitivity factor of a 24MgCs(+) ion to an AsCs+ ion showed a constant value with Increasing the Ga(1-x)Al(x)As composition x. We can determine an unknown GaAlAs composition and Mg concentration with good precision and sensitivity by detecting Cs cluster ions.

引用

页码：447 / 448

页数：2

共 4 条

[1]

Benninghoven A., 1987, SECONDARY ION MASS S, P290

[2] A NEW SECONDARY ION MASS-SPECTROMETRY TECHNIQUE FOR III-V SEMICONDUCTOR COMPOUNDS USING THE MOLECULAR-IONS CSM [J].

GAO, Y .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3760-3762

[3] ON THE USE OF CSX+ CLUSTER IONS FOR MAJOR ELEMENT DEPTH PROFILING IN SECONDARY ION MASS-SPECTROMETRY [J].

MAGEE, CW ;

HARRINGTON, WL ;

BOTNICK, EM .

INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1990, 103 (01) :45-56

[4] LATTICE DISTORTION IN LPE GA1-XALXAS LAYERS [J].

ROWLAND, MC ;

SMITH, DA .

JOURNAL OF CRYSTAL GROWTH, 1977, 38 (01) :143-144

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