OPTICAL-PROPERTIES OF TERNARY AND QUATERNARY IV-VI SEMICONDUCTOR LAYERS ON (100) BAF2 SUBSTRATES

被引：17

作者：

MCCANN, PJ

LI, L

FURNEAUX, JE

WRIGHT, R

机构：

[1] UNIV OKLAHOMA,ELECTR PROPERTIES MAT LAB,NORMAN,OK 73019

[2] UNIV OKLAHOMA,DEPT PHYS & ASTRON,NORMAN,OK 73019

[3] UNIV CALIF LOS ANGELES,DEPT MAT SCI & ENGN,LOS ANGELES,CA 90024

[4] AEROSP CORP,LOS ANGELES,CA 90009

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.113199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fourier transform infrared (FTIR) absorption spectra and photoluminescence (PL) spectra for PbSe0.78Te0.22 and Pb0.95Sn0.05Se0.80Te0.20 layers grown by liquid phase epitaxy on (100)BaF2 substrates are reported. FTIR absorption edges varied from 213 to 275 meV (between 4 and 300 K) for the ternary alloy and from 118 to 200 meV (between 10 and 300 K) for the quaternary alloy. PL energies were 174 meV at 5 keV for the ternary alloy and 100 meV at 7.1 K for the quaternary alloy. The differences between the low temperature FTIR absorption edge energies and the PL energies are attributed to the Burstein-Moss effect.© 1995 American Institute of Physics.

引用

页码：1355 / 1357

页数：3

共 17 条

[1] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].