NONLINEAR GROWTH OF PERIODIC RIPPLE STRUCTURES WITH DIFFERENT SPATIAL PERIODS IN LASER ETCHING OF GAAS

被引：7

作者：

KUMAGAI, H ^{[1
]}

MACHIDA, H ^{[1
]}

TOYODA, K ^{[1
]}

TANAKA, S ^{[1
]}

机构：

[1] UNIV TOKYO,DEPT APPL PHYS SCI,SHINJUKU KU,TOKYO 162,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 11B期

关键词：

LASER ETCHING; GAAS; SURFACE PLASMA WAVE; PERIODIC RIPPLE; HOLOGRAPHIC EXPOSURE; GRATING;

D O I：

10.1143/JJAP.30.3186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nonlinear growth of periodic surface ripples in laser-induced etching of GaAs was investigated for different spatial periods below 200 nm. Growth gains of etched grooves were more than 5%/min at the above periods both experimentally and theoretically.

引用

页码：3186 / 3189

页数：4

共 9 条

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