ON 1/F TRAPPING NOISE IN MOSTS

被引:15
作者
KLEINPENNING, TGM
机构
[1] Department of Electrical Engineering, Eindhoven University of Technology
关键词
D O I
10.1109/16.57173
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
New calculations are given for the 1/f noise in MOST’s based on the McWhorter model (number fluctuations). Particular attention has been paid to two regions of the drain current-voltage characteristic: weak inversion and near saturation. The results are at variance with the existing theories, where some errors have been made. The gravest error was the violation of the physical law ΔN2 ≤ N, with ΔN2 the variance of the number of carriers N in the channel. The calculations do not give a divergent noise power at current saturation, as found by other authors. In the ohmic region, the relation between the spectral density of the drain current fluctuations and the number of carriers is found to be [FORMULA OMITTED] with k = 0, 1, and 2 at weak, intermediate, and strong inversion, respectively. The Langevin method and the Klaassen-Prins method for calculating the 1/f noise in MOST’s have been discussed, and the methods shown to have been used incorrectly where the mobility and the Hooge 1/f noise parameter depend on position in the channel. © 1990 IEEE
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页码:2084 / 2089
页数:6
相关论文
共 12 条
[11]   THEORY OF MOS-TRANSISTOR IN WEAK INVERSION - NEW METHOD TO DETERMINE NUMBER OF SURFACE STATES [J].
VANOVERSTRAETEN, RJ ;
DECLERCK, GJ ;
MULS, PA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) :282-288
[12]   THEORY AND EXPERIMENTS OF LOW-FREQUENCY GENERATION-RECOMBINATION NOISE IN MOS TRANSISTORS [J].
YAU, LD ;
SAH, CT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (02) :170-+