ELECTRICALLY DETECTED MAGNETIC-RESONANCE IN P-N-JUNCTION DIODES

被引：26

作者：

RONG, F ^{[1
]}

POINDEXTER, EH ^{[1
]}

HARMATZ, M ^{[1
]}

BUCHWALD, WR ^{[1
]}

GERARDI, GJ ^{[1
]}

机构：

[1] WILLIAM PATERSON STATE COLL,DEPT CHEM,WAYNE,NJ 07470

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 76卷 / 08期

关键词：

D O I：

10.1016/0038-1098(90)90088-S

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electrically-detected magnetic resonance from spin-dependent recombination or generation has been observed in various Si p-n junction diodes. The g-values varied widely among similar diodes of different manufacture; most differed from Si damage at g ≈ 2.0055 reported by other researchers. The lowest g-value (1.965) is out of the range of carrier, band-tail, and dangling Si orbital centers; it may indicate metallic ions. © 1990.

引用

页码：1083 / 1086

页数：4

共 13 条

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