ELECTRICALLY DETECTED MAGNETIC-RESONANCE IN P-N-JUNCTION DIODES

被引:26
作者
RONG, F [1 ]
POINDEXTER, EH [1 ]
HARMATZ, M [1 ]
BUCHWALD, WR [1 ]
GERARDI, GJ [1 ]
机构
[1] WILLIAM PATERSON STATE COLL,DEPT CHEM,WAYNE,NJ 07470
关键词
D O I
10.1016/0038-1098(90)90088-S
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Electrically-detected magnetic resonance from spin-dependent recombination or generation has been observed in various Si p-n junction diodes. The g-values varied widely among similar diodes of different manufacture; most differed from Si damage at g ≈ 2.0055 reported by other researchers. The lowest g-value (1.965) is out of the range of carrier, band-tail, and dangling Si orbital centers; it may indicate metallic ions. © 1990.
引用
收藏
页码:1083 / 1086
页数:4
相关论文
共 13 条