PREPARATION AND ELECTRICAL PROPERTIES OF HOMOGENEOUS GAXIN1-XSB ALLOYS

[1] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710

[2] ESQUIROL P, 1971, THESIS MONTPELLIER

[3] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE [J]. ELECTRONICS LETTERS, 1970, 6 (09) : 277 - &

[4] IVANOVOMSKII VI, 1960, SOV PHYS-SOL STATE, V2, P363

[5] IVANOVOMSKII VI, 1959, SOV PHYS-SOL STATE, V1, P834

[6] MACGRODDY JC, 1969, SOLID STATE COMM, V7, P902

[7] GROWTH AND SOME PROPERTIES OF GAXIN1-XSB [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 11 (03) : 341 - &

[8] ELECTRICAL PROPERTIES OF GASB-INSB ALLOYS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 17 (1-2) : 34 - 43

[9] OPTICAL ENERGY GAP VARIATION IN THE GASB-INSB SYSTEM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 74 (477): : 244 - 248

[1] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710

[2] ESQUIROL P, 1971, THESIS MONTPELLIER

[3] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE [J]. ELECTRONICS LETTERS, 1970, 6 (09) : 277 - &

[4] IVANOVOMSKII VI, 1960, SOV PHYS-SOL STATE, V2, P363

[5] IVANOVOMSKII VI, 1959, SOV PHYS-SOL STATE, V1, P834

[6] MACGRODDY JC, 1969, SOLID STATE COMM, V7, P902

[7] GROWTH AND SOME PROPERTIES OF GAXIN1-XSB [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 11 (03) : 341 - &

[8] ELECTRICAL PROPERTIES OF GASB-INSB ALLOYS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 17 (1-2) : 34 - 43

[9] OPTICAL ENERGY GAP VARIATION IN THE GASB-INSB SYSTEM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 74 (477): : 244 - 248