3-LEVEL CONDUCTION-BAND STRUCTURE OF GAAS FROM HIGH-STRESS AND HIGH-FIELD MEASUREMENTS

被引：18

作者：

ADAMS, AR

VINSON, PJ

PICKERING, C

PITT, GD

FAWCETT, W

机构：

[1] UNIV SURREY, DEPT PHYS, GUILDFORD GU2 5XH, SURREY, ENGLAND

[2] STAND TELECOMMUN LABS LTD, HARLOW CM17 9NA, ESSEX, ENGLAND

[3] RSRE, MALVERN, WORCESTERSHIRE, ENGLAND

来源：

ELECTRONICS LETTERS | 1977年 / 13卷 / 02期

关键词：

D O I：

10.1049/el:19770033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：46 / 48

页数：3

共 15 条

[1]

ADAMS A, TO BE PUBLISHED

[2] ORDERING AND ABSOLUTE ENERGIES OF L6C AND X6C CONDUCTION-BAND MINIMA IN GAAS [J].

ASPNES, DE ;

OLSON, CG ;

LYNCH, DW .

PHYSICAL REVIEW LETTERS, 1976, 37 (12) :766-769

[3]

ASPNES DE, TO BE PUBLISHED

[4] Electrical properties of the GaAs X-1C minima at low electric fields from a high-pressure experiment [J].

Fitt, G. D. ;

Lees, J. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :4144-4160

[5] EFFECTS OF UNIAXIAL STRESS ON ELECTRICAL RESISTIVITY AND GUNN EFFECT IN N-TYPE GAAS [J].

HARRIS, JS ;

MOLL, JL ;

PEARSON, GL .

PHYSICAL REVIEW B, 1970, 1 (04) :1660-&

[6] ELECTRON-PHONON INTERACTION AND INTER-VALLEY SCATTERING IN SEMICONDUCTORS [J].

HERBERT, DC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (18) :2788-2810

[7] TRANSPORT PROPERTIES OF GAAS OBTAINED FROM PHOTOEMISSION MEASUREMENTS [J].

JAMES, LW ;

MOLL, JL .

PHYSICAL REVIEW, 1969, 183 (03) :740-&

[8] EFFECT OF PRESSURE ON HIGH ELECTRIC-FIELD INSTABILITIES IN NORMAL-TYPE GAAS [J].

PICKERING, C ;

ADAMS, AR ;

PITT, GD ;

VYAS, MKR .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (02) :129-137

[9]

PICKERING C, 1976, THESIS U SURREY

[10]

PICKERING C, TO BE PUBLISHED

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