SI-NL10 - PARAMAGNETIC ACCEPTOR STATE OF THE SILICON THERMAL DONOR

被引：18

作者：

BEKMAN, HHPT ^{[1
]}

GREGORKIEWICZ, T ^{[1
]}

AMMERLAAN, CAJ ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST PHYS,WARSAW 42,POLAND

来源：

关键词：

D O I：

10.1103/PhysRevLett.61.227

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：227 / 230

页数：4

共 11 条

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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) : 4404 - 4405
[2] Bourret A., 1985, Thirteenth International Conference on Defects in Semiconductors, P129
[3] OXYGEN INCORPORATION IN THERMAL-DONOR CENTERS IN SILICON
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AMMERLAAN, CAJ
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (15) : 1702 - 1705
[4] ELECTRON-PARAMAGNETIC-RES STUDIES OF HEAT-TREATMENT CENTERS IN P-TYPE SILICON
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BEKMAN, HHPT
AMMERLAAN, CAJ
[J]. PHYSICAL REVIEW B, 1987, 35 (08): : 3810 - 3817
[5] GREGORKIEWICZ T, IN PRESS PHYS REV B
[6] Lee K. M., 1985, MICROSCOPIC IDENTIFI, V46, P263
[7] EPR-SPECTRA OF HEAT-TREATMENT CENTERS IN OXYGEN-RICH SILICON
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AMMERLAAN, CAJ
[J]. SOLID STATE COMMUNICATIONS, 1978, 25 (12) : 987 - 990
[8] MULLER SH, 1979, I PHYS C SER, V46, P297
[9] PAJOT B, 1979, IOP C P, V46, P685
[10] ENERGY LEVELS IN ELECTRON-BOMBARDED SILICON
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[J]. PHYSICAL REVIEW, 1957, 105 (06): : 1730 - 1735