PREPARATION CONDITIONS OF CDS THIN-FILMS BY FLOWED LIQUID-FILM METHOD

被引：16

作者：

ITO, K

SHIRAISHI, K

机构：

[1] Osaka Prefectural College of Technology, Department of Applied Chemistry 26-12, Neyagawa, Osaka, 572, Saiwai

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 35卷 / 1-4期

关键词：

D O I：

10.1016/0927-0248(94)90138-4

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The flowed liquid film method was applied for the CdS thin film preparation. This method is a kind of solution growth, but it can prepare the films continuously. The CdS films prepared by this method were polycrystalline films with hexagonal phase only and were sufficiently coherent, uniform, and transparent. The preparation of CdS thin films by this method was affected considerably by the reaction pH. The CdS thin films were prepared in the range of pH 7 to 9. The electrical resistivity of the films varied appreciably with the reaction pH, and had a minimum value of 10(1) Omega cm at pH 8. The size of the particles in the CdS films increased with an increase of the reaction pH. The reaction temperature also affected the resistivity of the CdS films.

引用

页码：179 / 184

页数：6

共 14 条

[1] FERRITE PLATING ON GAAS FOR MICROWAVE MONOLITHIC INTEGRATED-CIRCUIT [J].