VAPOR GROWTH OF DOPED MERCURIC IODIDE-CRYSTALS BY TEMPERATURE OSCILLATION METHOD

被引：30

作者：

VANDENBERG, L ^{[1
]}

SCHNEPPLE, WF ^{[1
]}

ORTALE, C ^{[1
]}

SCHIEBER, M ^{[1
]}

机构：

[1] HEBREW UNIV JERUSALEM,SCH APPL SCI & TECHNOL,JERUSALEM 91000,ISRAEL

来源：

关键词：

D O I：

10.1016/0022-0248(77)90190-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：160 / 165

页数：6

共 8 条

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[2] VAPOR GROWTH OF HGI-2 BY PERIODIC SOURCE OR CRYSTAL TEMPERATURE OSCILLATION
SCHIEBER, M
SCHNEPPLE, WF
VANDENBERG, L
[J]. JOURNAL OF CRYSTAL GROWTH, 1976, 33 (01) : 125 - 135
[3] SCHIEBER M, UNPUBLISHED
[4] Schieber M., 1977, CRYSTAL GROWTH MATER, V2, P279
[5] SCHOLZ H, 1974, ACTA ELECTRONICS, V17, P69
[6] EVAPORATIVE DEGRADATION OF HGI2 X-RAY DETECTORS
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FREDERICKS, GE
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (02) : 99 - 100
[7] TRIBOULET R, 1974, J APPL PHYS, V45, P27
[8] CADMIUM TELLURIDE X-RAY SPECTROMETER
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[J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 159 - 160