METAL-N-GAP SCHOTTKY-BARRIER HEIGHTS

被引:15
作者
LEI, TF [1 ]
LEE, CL [1 ]
CHANG, CY [1 ]
机构
[1] NATL CHENG KUNG UNIV,ELECTR & ELECT ENGN RES INST,TAINAN,TAIWAN
关键词
D O I
10.1016/0038-1101(79)90007-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A systematic study, which aims to extend the existing metal/n-Gap Schottky barrier height data, is made. Schottky diodes of various barriers, which included Pt/n-GaP, Au/n-GaP, Ni/n-GaP, Mo/n-Gap, Al/n-GaP, Cr/n-GaP, Ag/n-GaP and Cu/n-GaP, were fabricated and their I-V and C-V characteristics were measured. The derived barrier height values for Au, Cr, and Cu agree with the existing data. The derived I-V and C-V barrier height data on Ni, Mo and Ag extend the present barrier height data for n-type GaP. The C-V barrier height values are plotted vs work function of metals and a straight line relationship is obtained. © 1979.
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页码:1035 / 1037
页数:3
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