A systematic study, which aims to extend the existing metal/n-Gap Schottky barrier height data, is made. Schottky diodes of various barriers, which included Pt/n-GaP, Au/n-GaP, Ni/n-GaP, Mo/n-Gap, Al/n-GaP, Cr/n-GaP, Ag/n-GaP and Cu/n-GaP, were fabricated and their I-V and C-V characteristics were measured. The derived barrier height values for Au, Cr, and Cu agree with the existing data. The derived I-V and C-V barrier height data on Ni, Mo and Ag extend the present barrier height data for n-type GaP. The C-V barrier height values are plotted vs work function of metals and a straight line relationship is obtained. © 1979.