INCORPORATION OF OXYGEN INTO SILICON DURING PULSED-LASER IRRADIATION

被引：32

作者：

HOH, K ^{[1
]}

KOYAMA, H ^{[1
]}

UDA, K ^{[1
]}

MIURA, Y ^{[1
]}

机构：

[1] VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 07期

关键词：

D O I：

10.1143/JJAP.19.L375

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L375 / L378

页数：4

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BATTAGLIN, G
DELLAMEA, G
DRIGO, AV
FOTI, G
BENTINI, GG
SERVIDORI, M
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (01): : 347 - 352
[2] HEAT-TREATMENT BEHAVIOR OF MICRODEFECTS AND RESIDUAL IMPURITIES IN CZ SILICON-CRYSTALS
KISHINO, S
KANAMORI, M
YOSHIHIRO, N
TAJIMA, M
IIZUKA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8240 - 8243