2-STAGE LASER ANNEALING OF LATTICE DISORDER IN PHOSPHORUS IMPLANTED SILICON

[1] BAERI P, APPL PHYS LETT

[2] CAMPISANO SU, J APPL PHYS

[3] DISORDER PRODUCED BY HIGH-DOSE IMPLANTATION IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 645 - 648

[4] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[5] STRUCTURE OF CRYSTALLIZED LAYERS BY LASER ANNEALING OF (100) AND (111) SELF-IMPLANTED SILICON SAMPLES [J]. APPLIED PHYSICS, 1978, 15 (04): : 365 - 369

[6] LATTICE LOCATION OF BORON IMPLANTED SILICON AFTER LASER ANNEALING [J]. LETTERE AL NUOVO CIMENTO, 1978, 21 (03): : 89 - 93

[7] AMORPHOUS THICKNESS DEPENDENCE IN TRANSITION TO SINGLE-CRYSTAL INDUCED BY LASER-PULSE [J]. PHYSICS LETTERS A, 1978, 65 (5-6) : 430 - 432

[8] KACHURIN GA, 1976, ION IMPLANTATION SEM

[9] KHAIBULIN IB, 1975, P C ION IMPLANTATION, P212

[10] KHAIBULLIN IB, 1977, 1ST USSR US SEM ION

[1] BAERI P, APPL PHYS LETT

[2] CAMPISANO SU, J APPL PHYS

[3] DISORDER PRODUCED BY HIGH-DOSE IMPLANTATION IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 645 - 648

[4] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[5] STRUCTURE OF CRYSTALLIZED LAYERS BY LASER ANNEALING OF (100) AND (111) SELF-IMPLANTED SILICON SAMPLES [J]. APPLIED PHYSICS, 1978, 15 (04): : 365 - 369

[6] LATTICE LOCATION OF BORON IMPLANTED SILICON AFTER LASER ANNEALING [J]. LETTERE AL NUOVO CIMENTO, 1978, 21 (03): : 89 - 93

[7] AMORPHOUS THICKNESS DEPENDENCE IN TRANSITION TO SINGLE-CRYSTAL INDUCED BY LASER-PULSE [J]. PHYSICS LETTERS A, 1978, 65 (5-6) : 430 - 432

[8] KACHURIN GA, 1976, ION IMPLANTATION SEM

[9] KHAIBULIN IB, 1975, P C ION IMPLANTATION, P212

[10] KHAIBULLIN IB, 1977, 1ST USSR US SEM ION