PIEZORESISTIVITY EFFECTS IN N-MOSFET DEVICES

被引：10

作者：

WANG, ZZ ^{[1
]}

SUSKI, J ^{[1
]}

COLLARD, D ^{[1
]}

DUBOIS, E ^{[1
]}

机构：

[1] SCHLUMBERGER IND,RES CTR,SMR,F-92542 MONTROUGE,FRANCE

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1992年 / 34卷 / 01期

关键词：

D O I：

10.1016/0924-4247(92)80140-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The piezoresistive coefficients in n-MOSFET devices have been experimentally determined. The pi-11, pi-12, and for the first time pi-44, two-dimensional (2D) piezoresistive coefficients in the n-type inversion layers have been analytically developed, including the quantum effects, the intravalley-intervalley scattering effects, the different saturation velocity effects and the hot-electron effects. The carrier charge variation due to the change of the band gap has also been taken into account. A mixed 2D/3D model for the piezoresistivity effects bas been introduced in the process/device simulator IMPACT and good agreement between simulation and experiment has been achieved.

引用

页码：59 / 65

页数：7

共 11 条

[1]

Bir G.L., 1974, SYMMETRY STRAIN INDU, P295

[2]

BORCHERT B, 1988, IEEE T ELECTRON DEV, V3, P483

[3] PIEZORESISTIVITY EFFECTS IN MOS-FET USEFUL FOR PRESSURE TRANSDUCERS [J].