THE ELECTRONIC-STRUCTURE OF WEAK, RANDOM, TWO-DIMENSIONAL AND 3-DIMENSIONAL POTENTIALS

[1] SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (10) : 673 - 676

[2] THRESHOLD CONDUCTION IN INVERSION LAYERS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (05): : 851 - 883

[3] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J]. PHYSICAL REVIEW, 1958, 109 (05): : 1492 - 1505

[4] ELEMENTARY EXCITATIONS IN FERMI GLASS [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (20) : 1340 - 1343

[5] LOCALIZATION OF PARTICLES IN A 2-DIMENSIONAL RANDOM POTENTIAL [J]. SOLID STATE COMMUNICATIONS, 1979, 30 (06) : 369 - 373

[6] HAYDOCK R, 1978, PHILOS MAG, V37, P97, DOI 10.1080/13642817808245310

[7] LOCALIZATION AND ITS ABSENCE IN CPA CALCULATIONS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (17): : 3001 - 3012

[8] HAYDOCK R, 1972, THESIS U CAMBRIDGE

[9] HAYDOCK R, 1980, SOLID STATE PHYS, V35, P215

[10] ANDERSON TRANSITION IN SILICON INVERSION LAYERS - ORIGIN OF RANDOM FIELD AND EFFECT OF SUBSTRATE BIAS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1977, 353 (1673) : 225 - 246

[1] SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (10) : 673 - 676

[2] THRESHOLD CONDUCTION IN INVERSION LAYERS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (05): : 851 - 883

[3] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J]. PHYSICAL REVIEW, 1958, 109 (05): : 1492 - 1505

[4] ELEMENTARY EXCITATIONS IN FERMI GLASS [J]. PHYSICAL REVIEW LETTERS, 1978, 40 (20) : 1340 - 1343

[5] LOCALIZATION OF PARTICLES IN A 2-DIMENSIONAL RANDOM POTENTIAL [J]. SOLID STATE COMMUNICATIONS, 1979, 30 (06) : 369 - 373

[6] HAYDOCK R, 1978, PHILOS MAG, V37, P97, DOI 10.1080/13642817808245310

[7] LOCALIZATION AND ITS ABSENCE IN CPA CALCULATIONS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (17): : 3001 - 3012

[8] HAYDOCK R, 1972, THESIS U CAMBRIDGE

[9] HAYDOCK R, 1980, SOLID STATE PHYS, V35, P215

[10] ANDERSON TRANSITION IN SILICON INVERSION LAYERS - ORIGIN OF RANDOM FIELD AND EFFECT OF SUBSTRATE BIAS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1977, 353 (1673) : 225 - 246