PROPERTIES OF A SI DOPED GAN/ALGAN SINGLE-QUANTUM-WELL

被引：38

作者：

SALVADOR, A ^{[1
]}

LIU, G ^{[1
]}

KIM, W ^{[1
]}

AKTAS, O ^{[1
]}

BOTCHKAREV, A ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,FREDERICK SEITZ MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 22期

关键词：

D O I：

10.1063/1.115234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantization of band-to-band transition in a Si doped GaN/AlGaN quantum well was investigated. A good fit to the room-temperature photoluminescence (PL) spectrum of the GaN quantum well studied was obtained using values 0.3m(e) and 0.19m(e) for the heavy hole and conduction electron effective masses, respectively, and a 67:33 conduction to valence band offset. (C) 1995 American Institute of Physics.

引用

页码：3322 / 3324

页数：3

共 12 条

[1] ROOM-TEMPERATURE LOW-THRESHOLD SURFACE-STIMULATED EMISSION BY OPTICAL-PUMPING FROM AL0.1GA0.9N/GAN DOUBLE-HETEROSTRUCTURE [J].

AMANO, H ;

WATANABE, N ;

KOIDE, N ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (7B) :L1000-L1002

[2] STIMULATED-EMISSION NEAR ULTRAVIOLET AT ROOM-TEMPERATURE FROM A GAN FILM GROWN ON SAPPHIRE BY MOVPE USING AN AIN BUFFER LAYER [J].

AMANO, H ;

ASAHI, T ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (02) :L205-L206

[3] PHOTOLUMINESCENCE CHARACTERISTICS OF ALGAN-GAN-ALGAN QUANTUM-WELLS [J].

KHAN, MA ;

SKOGMAN, RA ;

VANHOVE, JM ;

KRISHNANKUTTY, S ;

KOLBAS, RM .

APPLIED PHYSICS LETTERS, 1990, 56 (13) :1257-1259

[4] VALENCE-BAND DISCONTINUITY BETWEEN GAN AND ALN MEASURED BY X-RAY PHOTOEMISSION SPECTROSCOPY [J].

MARTIN, G ;

STRITE, S ;

BOTCHKAREV, A ;

AGARWAL, A ;

ROCKETT, A ;

MORKOC, H ;

LAMBRECHT, WRL ;

SEGALL, B .

APPLIED PHYSICS LETTERS, 1994, 65 (05) :610-612

[5] LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].

MORKOC, H ;

STRITE, S ;

GAO, GB ;

LIN, ME ;

SVERDLOV, B ;

BURNS, M .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398

[6]

MORKOC H, 1994, J ELECTROCHEM SOC, V141, P2266

[7]

MORKOC H, 1993, P IEEE, V81, P539

[8]

ORTON W, 1995, SEMICOND SCI TECH, V10, P101

[9]

Reynolds D.S, UNPUB

[10] TEMPERATURE-DEPENDENCE OF INTERBAND-TRANSITIONS IN GAN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

SHAN, W ;

SCHMIDT, TJ ;

YANG, XH ;

HWANG, SJ ;

SONG, JJ ;

GOLDENBERG, B .

APPLIED PHYSICS LETTERS, 1995, 66 (08) :985-987

← 1 2 →