TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF THIN SIO2-FILMS

被引：5

作者：

HIRAYAMA, M ^{[1
]}

ASAI, S ^{[1
]}

MATSUMOTO, H ^{[1
]}

SAWADA, K ^{[1
]}

NAGASAWA, K ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,KITAITAMI WORKS,AMAGASAKI,HYOGO 661,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 05期

关键词：

D O I：

10.1143/JJAP.20.L329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L329 / L332

页数：4

共 11 条

[1]

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[3]

Crook D. L., 1979, 17th Annual Proceedings Reliability Physics, P1, DOI 10.1109/IRPS.1979.362863

[4]

CROOK DL, 1978, IEDM, P444

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[6] DIELECTRIC-BREAKDOWN OF SILICON DIOXIDE THIN-FILM CAPACITORS USING POLYCRYSTALLINE SILICON AND ALUMINUM ELECTRODES [J].

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[7] IMPROVED DIELECTRIC RELIABILITY OF SIO2-FILMS WITH POLYCRYSTALLINE SILICON ELECTRODES [J].

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[8] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .1. MEASUREMENT AND INTERPRETATION [J].

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ORMOND, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) :591-+

[9] DIELECTRIC-BREAKDOWN PROPERTIES OF SIO2-FILMS GROWN IN HALOGEN AND HYDROGEN-CONTAINING ENVIRONMENTS [J].

OSBURN, CM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :809-815

[10] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .2. INFLUENCE OF PROCESSING AND MATERIALS [J].

OSBURN, CM ;

ORMOND, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) :597-+

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