DIELECTRIC-BREAKDOWN OF SILICON DIOXIDE THIN-FILM CAPACITORS USING POLYCRYSTALLINE SILICON AND ALUMINUM ELECTRODES

被引：9

作者：

ORMOND, DW ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 01期

关键词：

insulator; integrated circuits; reliability;

D O I：

10.1149/1.2128976

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

页码：162 / 164

页数：3

共 15 条

[1]

ANOLICK ES, 1975, MAY SPRING M TOR, V75, P137

[2] DIELECTRIC ISOLATION - COMPREHENSIVE, CURRENT AND FUTURE [J].

BEAN, KE ;

RUNYAN, WR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (01) :C5-C12

[3]

BERENBAUM L, 1975, MAY SPRING M TOR, V75, P137

[4] ORIGIN OF FIXED CHARGE IN THERMALLY OXIDIZED SILICON [J].

GORONKIN, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :314-317

[5]

IWAMATSU S, 1973 INT NAT EL DEV, P244

[6] MECHANISM OF SELF-HEALING ELECTRICAL BREAKDOWN IN MOS STRUCTURES [J].

KLEIN, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) :788-+

[7] IMPROVED DIELECTRIC RELIABILITY OF SIO2-FILMS WITH POLYCRYSTALLINE SILICON ELECTRODES [J].

OSBURN, CM ;

BASSOUS, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (01) :89-92

[8] ACCELERATED DIELECTRIC BREAKDOWN OF SILICON DIOXIDE FILMS [J].

OSBURN, CM ;

CHOU, NJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) :1377-1384

[9] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .1. MEASUREMENT AND INTERPRETATION [J].

OSBURN, CM ;

ORMOND, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) :591-+

[10] DIELECTRIC-BREAKDOWN PROPERTIES OF SIO2-FILMS GROWN IN HALOGEN AND HYDROGEN-CONTAINING ENVIRONMENTS [J].

OSBURN, CM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :809-815

← 1 2 →