DLTS MEASUREMENTS OF TRAPPING DEFECTS IN HIGH-PURITY GERMANIUM

被引：30

作者：

EVWARAYE, AO

HALL, RN

SOLTYS, TJ

机构：

[1] General Electric Company, Corporate Research and Development Center, Schenectady

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1979年 / 26卷 / 01期

关键词：

D O I：

10.1109/TNS.1979.4329644

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

收藏

页码：271 / 275

页数：5

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[11] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
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[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[12] DETERMINATION OF COMPENSATION DENSITY BY HALL AND MOBILITY ANALYSIS IN COPPER-DOPED GERMANIUM
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[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 6 (02): : 470 - +
[13] LOW-TEMPERATURE THERMOCOUPLES - KP, NORMAL SILVER, AND COPPER VERSUS AU 0.02 AT PERCENT FE AND AU 0.07 AT PERCENT FE
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[J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY, 1972, A-76 (03): : 263 - +
[14] HOLE TRAPS IN GERMANIUM CRYSTALS
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[J]. NUCLEAR INSTRUMENTS & METHODS, 1973, 108 (02): : 335 - 338
[15] HIGH-PURITY GERMANIUM - LOW-TEMPERATURE HALL ANALYSES
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (01) : 273 - 278