FABRICATION AND OPTICAL CHARACTERIZATION OF 1ST ORDER DFB GAINP/ALGAINP LASER STRUCTURES AT 639NM

被引：13

作者：

KORN, M ^{[1
]}

KORFER, T ^{[1
]}

FORCHEL, A ^{[1
]}

ROENTGEN, P ^{[1
]}

机构：

[1] IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 09期

关键词：

Lasers and laser applications; Semiconductor lasers;

D O I：

10.1049/el:19900403

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication and optical analysis of first order DFB laser structures based on double heterostructure (DH) GalnP / AlGalnP layers are reported. The lasers show single mode operation in the visible range (639 nm). © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：614 / 615

页数：2

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