THE SI-H IR ABSORPTION-BANDS IN NTD FZ (H2) SI AND THEIR IDENTIFICATION

被引：9

作者：

MENG, XT

机构：

[1] Institute of Nuclear Energy Technology, Tsinghua, University Beijing

来源：

PHYSICA B | 1991年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(91)90132-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The 1832, 2054, 1980, 2066, 1970, 1984, 2016 and 2050-2150 cm-1 Si-H infrared absorption bands in neutron transmutation doped FZ-silicon grown in a hydrogen atmosphere have been identified.

引用

页码：249 / 252

页数：4

共 8 条

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[2]

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[3]

MENG XT, 1987, PHYS STATUS SOLIDI A, V101, P619, DOI 10.1002/pssa.2211010238

[4] THE NATURE OF A 2050-2150-CM-1 INFRARED BAND IN NEUTRON-TRANSMUTATION-DOPED SILICON GROWN BY THE FLOATING-ZONE METHOD IN A HYDROGEN ATMOSPHERE [J].

MENG, XT ;

QIN, GG ;

DU, YC ;

ZHANG, YF .

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[5]

MENG XT, 1982, CHINESE J NUCL SCI E, V2, P172

[6] MODELS FOR THE HYDROGEN-RELATED DEFECT IMPURITY COMPLEXES AND SI-H INFRARED BANDS IN CRYSTALLINE SILICON [J].

SHI, TS ;

SAHU, SN ;

OEHRLEIN, GS ;

HIRAKI, A ;

CORBETT, JW .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 74 (01) :329-341

[7] VACANCIES AND THE CHEMICAL TRAPPING OF HYDROGEN IN SILICON [J].

STEIN, HJ .

PHYSICAL REVIEW LETTERS, 1979, 43 (14) :1030-1033

[8]

XU YC, 1985, NUCL TECHNOL, V8, P36

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