VACANCIES AND THE CHEMICAL TRAPPING OF HYDROGEN IN SILICON

被引：94

作者：

STEIN, HJ

机构：

[1] Sandia Laboratories, Albuquerque

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 43卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.43.1030

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The first evidence for SiH1-like centers in crystalline Si (c-Si) is presented from infrared measurements of H (D) implanted at 80 K. In contrast to SiH1 centers in amorphous Si (a-Si) which are stable to 700 K, the crystalline band anneals below 300 K with an activation energy and illumination enhancement that are characteristic of the Si vacancy. These results relate specific defects for implanted H in c-Si to previous observations for H in a-Si. © 1979 The American Physical Society.

引用

页码：1030 / 1033

页数：4

共 13 条

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