DIAMOND CHEMICAL VAPOR-DEPOSITION

被引：140

作者：

CELII, FG ^{[1
]}

BUTLER, JE ^{[1
]}

机构：

[1] USN,RES LAB,GAS SURFACE DYNAM SECT,WASHINGTON,DC 20375

来源：

关键词：

OPTICAL DIAGNOSTICS; INSITU TECHNIQUES; GROWTH MODELING; GAS-PHASE KINETICS; NUCLEATION;

D O I：

10.1146/annurev.pc.42.100191.003235

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

[No abstract available]

引用

页码：643 / 684

页数：42

共 228 条

[91] HSU WL, 1991, MAT RES S C, P239
[92] ENERGETICS OF ACETYLENE-ADDITION MECHANISM OF DIAMOND GROWTH
HUANG, D
FRENKLACH, M
MARONCELLI, M
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1988, 92 (22) : 6379 - 6381
[93] HUS DSY, 1989, 4TH SDIO IST DIAMOND
[94] EARLY FORMATION OF CHEMICAL VAPOR-DEPOSITION DIAMOND FILMS
IIJIMA, S
AIKAWA, Y
BABA, K
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (25) : 2646 - 2648
[95] INSPEKTOR A, 1989, ELECTROCHEM SOC P, P342
[96] ON THE THERMAL-DISSOCIATION OF HYDROGEN
JANSEN, F
CHEN, I
MACHONKIN, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (12) : 5749 - 5755
[97] THE DEPOSITION OF DIAMOND FILMS BY FILAMENT TECHNIQUES
JANSEN, F
MACHONKIN, MA
KUHMAN, DE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (05): : 3785 - 3790
[98] ORIENTED CUBIC NUCLEATIONS AND LOCAL EPITAXY DURING DIAMOND GROWTH ON SILICON (100) SUBSTRATES
JENG, DG
TUAN, HS
SALAT, RF
FRICANO, GJ
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (20) : 1968 - 1970
[99] JOFFREAU PO, 1988, J REF HARD METALS, V7, P92
[100] JOFFREAU PO, 1988, J REF HARD METALS, V7, P186