CHARGE-COUPLED-DEVICES IN EPITAXIAL HGCDTE-CDTE HETEROSTRUCTURE

被引：8

作者：

KIM, ME ^{[1
]}

TAUR, Y ^{[1
]}

SHIN, SH ^{[1
]}

BOSTRUP, G ^{[1
]}

KIM, JC ^{[1
]}

CHEUNG, DT ^{[1
]}

机构：

[1] ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 04期

关键词：

D O I：

10.1063/1.92713

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：336 / 338

页数：3

共 10 条

[1] HG0.7CD0.3TE CHARGE-COUPLED DEVICE SHIFT REGISTERS [J].

CHAPMAN, RA ;

KINCH, MA ;

SIMMONS, A ;

BORRELLO, SR ;

MORRIS, HB ;

WROBEL, JS ;

BUSS, DD .

APPLIED PHYSICS LETTERS, 1978, 32 (07) :434-436

[2]

CHAPMAN RA, 1979, IEDM567570 TECH DIG

[3] HIGH-PERFORMANCE BACKSIDE-ILLUMINATED HG0.78CD0.22TE-CDTE(LAMBDA-CO=10-MU-M) PLANAR DIODES [J].

CHU, M ;

VANDERWYCK, AHB ;

CHEUNG, DT .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :486-488

[4]

KIM ME, 1980, SPIE P, V217, P100

[5]

KINCH MA, 1980, IEDM508511 TECH DIG

[6]

LANIR M, 1980, JUL IRIS DET SPEC M

[7]

SHIN SH, 1981, FEB SPIE M N HOLL

[8] HGCDTE-CDTE HETEROSTRUCTURE DIODES AND MOSAICS [J].

WANG, CC ;

CHU, M ;

SHIN, SH ;

TENNANT, WE ;

CHEUNG, JT ;

LANIR, M ;

VANDERWYCK, AHB ;

WILLIAMS, GM ;

BUBULAC, LO ;

EISEL, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :154-160

[9] LIQUID-PHASE GROWTH OF HGCDTE EPITAXIAL LAYERS [J].

WANG, CC ;

SHIN, SH ;

CHU, M ;

LANIR, M ;

VANDERWYCK, AHB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :175-179

[10]

WILLIAMS GM, 1980, ELECTRON LETT, V16, P839

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