METAL-INSULATOR PHASE-TRANSITION IN VO2 - INFLUENCE OF FILM THICKNESS AND SUBSTRATE

被引：26

作者：

BABKIN, EV

CHARYEV, AA

DOLGAREV, AP

URINOV, HO

机构：

[1] USSR Acad of Sciences, Krasnoyarsk, USSR, USSR Acad of Sciences, Krasnoyarsk, USSR

来源：

关键词：

D O I：

10.1016/0040-6090(87)90304-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：11 / 14

页数：4

共 7 条

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[J]. THIN SOLID FILMS, 1984, 117 (03) : 217 - 221
[2] PHASE-TRANSITION IN REACTIVELY CO-SPUTTERED FILMS OF VO2-TIO2
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ABELES, B
ARIE, Y
[J]. THIN SOLID FILMS, 1974, 24 (02) : 307 - 310
[3] GROWTH OF VO2 SINGLE CRYSTALS BY CHEMICAL TRANSPORT REACTION
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NAGASAWA, K
KATO, Y
TAKADA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (05) : 633 - &
[4] BUGAEV AA, 1979, FASOVYI PEREHOD META
[5] KOMNIK JF, 1979, FIZIKA METALLISCHESK
[6] Mott NF, 1979, METAL INSULATOR TRAN
[7] STRESS-INDUCED SWITCHING IN VO2 THIN-FILMS
UFERT, KD
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (01): : K83 - K86