A SELECTIVE DRY-ETCH TECHNIQUE FOR GAAS-MESFET GATE RECESSING

[1] ULTRAHIGH SPEED HIGH ELECTRON-MOBILITY TRANSISTOR LARGE-SCALE INTEGRATION TECHNOLOGY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1387 - 1392

[2] CHI TY, 1987, OCT P GAAS IC S PORT, P159

[3] USE OF THIN ALGAAS AND INGAAS STOP-ETCH LAYERS FOR REACTIVE ION ETCH PROCESSING OF III-V-COMPOUND SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2225 - 2226

[4] SELECTIVE DRY ETCHING OF ALGAAS-GAAS HETEROJUNCTION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L847 - L850

[5] X-RAY PHOTOEMISSION SPECTRA FOR ALXGA1-XAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 1129 - 1131

[6] A FULLY OPERATIONAL 1-KBIT HEMT STATIC RAM [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 548 - 553

[7] AN ANALYTICAL STUDY OF ETCH AND ETCH-STOP REACTIONS FOR GAAS ON ALGAAS IN CCL2F2 PLASMA [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) : 2358 - 2364

[1] ULTRAHIGH SPEED HIGH ELECTRON-MOBILITY TRANSISTOR LARGE-SCALE INTEGRATION TECHNOLOGY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1387 - 1392

[2] CHI TY, 1987, OCT P GAAS IC S PORT, P159

[3] USE OF THIN ALGAAS AND INGAAS STOP-ETCH LAYERS FOR REACTIVE ION ETCH PROCESSING OF III-V-COMPOUND SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2225 - 2226

[4] SELECTIVE DRY ETCHING OF ALGAAS-GAAS HETEROJUNCTION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L847 - L850

[5] X-RAY PHOTOEMISSION SPECTRA FOR ALXGA1-XAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 1129 - 1131

[6] A FULLY OPERATIONAL 1-KBIT HEMT STATIC RAM [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 548 - 553

[7] AN ANALYTICAL STUDY OF ETCH AND ETCH-STOP REACTIONS FOR GAAS ON ALGAAS IN CCL2F2 PLASMA [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) : 2358 - 2364