IMPROVEMENT OF RELIABILITY OF GUNN DIODES

被引：5

作者：

SHOJI, M

DALESSIO, FJ

机构：

[1] Bell Telephone Laboratories, Inc., Murray Hill

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 02期

关键词：

D O I：

10.1109/PROC.1969.6950

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reliability of Gunn diodes greatly improved by using device structures which prevent high-field domains from reaching the anode. © 1969 IEEE. All rights reserved.

引用

收藏

页码：250 / +

页数：1

相关论文

共 3 条

[1] CONTRIBUTION TO EXPERIMENTAL STUDY OF GUNN EFFECT IN LONG GAAS SAMPLES [J].

GUETIN, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) :552-+

[2] FAILURE MECHANISMS IN GUNN DIODES [J].

JEPPSSON, B ;

MARKLUND, I .

ELECTRONICS LETTERS, 1967, 3 (05) :213-+

[3]

SHOJI M, UNPUBLISHED