INDIRECT, GAMMA-8NU-X-1C, BAND GAP IN GAAS1-XPX

被引：62

作者：

ONTON, A ^{[1
]}

FOSTER, LM ^{[1
]}

机构：

[1] IBM CORP,TJ WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 12期

关键词：

D O I：

10.1063/1.1661076

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5084 / 5090

页数：7

共 34 条

[1] NONHYDROGENIC EXCITON AND ENERGY-GAP OF GAAS [J].

BIMBERG, D ;

SCHAIRER, W .

PHYSICAL REVIEW LETTERS, 1972, 28 (07) :442-&

[2] OPTICAL PROPERTIES OF SILVER AND CUPROUS HALIDES [J].

CARDONA, M .

PHYSICAL REVIEW, 1963, 129 (01) :69-+

[3] ELECTROLUMINESCENCE AND ELECTRICAL PROPERTIES OF HIGH-PURITY VAPOR-GROWN GAP [J].

CRAFORD, MG ;

GROVES, WO ;

HERZOG, AH ;

HILL, DE .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2751-+

[4] LOW-LEVEL INTERBAND ABSORPTION IN PHOSPHORUS-RICH GALLIUM ARSENIDE-PHOSPHIDE [J].

DEAN, PJ ;

KAMINSKY, G ;

ZETTERST.RB .

PHYSICAL REVIEW, 1969, 181 (03) :1149-&

[5] ABSORPTION AND LUMINESCENCE OF EXCITONS AT NEUTRAL DONORS IN GALLIUM PHOSPHIDE [J].

DEAN, PJ .

PHYSICAL REVIEW, 1967, 157 (03) :655-&

[6] INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

THOMAS, DG .

PHYSICAL REVIEW, 1966, 150 (02) :690-&

[7] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

FROSCH, CJ ;

HENRY, CH .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5631-&

[8] INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV [J].

DEAN, PJ ;

KAMINSKY, G ;

ZETTERSTROM, RB .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3551-+

[9]

DEAN PJ, 1968, J APPL PHYS, V39, P563

[10]

DOLLING G, 1965, 1963 P INT C LATT DY, P19

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