EPITAXY OF BETA-FESI2 ON SI(111)

被引：35

作者：

JEDRECY, N

ZHENG, Y

WALDHAUER, A

SAUVAGESIMKIN, M

PINCHAUX, R

机构：

[1] UNIV PARIS 07,F-75252 PARIS 05,FRANCE

[2] CTR UNIV PARIS SUD,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE

[3] CENS,DEPT RECH ETAT CONDENSE ATOM & MOLEC,F-91190 GIF SUR YVETTE,FRANCE

[4] UNIV PARIS 06,F-75252 PARIS 05,FRANCE

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.48.8801

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The epitaxial relationships of beta-FeSi2 films grown on Si(111) by solid-phase epitaxy and reactive-deposition epitaxy were investigated by x-ray diffraction. The beta(101) and beta(110) epitaxies were unambiguously detected by use of the beta space-group extinction rules. Three orientations, as expected from the Si bulk 3m symmetry, are developed in equal proportions. They can be related to a B-type fluoritelike epitaxy. Intensity profiles around Bragg nodes proved the intrinsic presence of beta(100) [011]/2 stacking faults. An electron-microscopy analysis has pointed out the role of the beta(100) orientation in the growth mechanism. An additional orientation was equally revealed which concerns beta islands with (001) [or (010)] facets parallel to inward Si(110) planes.

引用

收藏

页码：8801 / 8808

页数：8

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