Fabrication of Buried co-planar Metal-Insulator-Metal nanojunctions with a gap lower than 10 nm

被引：21

作者：

Rousset, V ^{[1
]}

Joachim, C ^{[1
]}

Itoua, S ^{[1
]}

Rousset, B ^{[1
]}

Fabre, N ^{[1
]}

机构：

[1] CNRS,LAAS,F-31077 TOULOUSE,FRANCE

来源：

JOURNAL DE PHYSIQUE III | 1995年 / 5卷 / 12期

关键词：

D O I：

10.1051/jp3:1995243

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An improvement of a process to fabricate co-planar metal-insulator-metal nanojunctions is presented to reach a gap length much lower than 10 nm using a 20 keV e-beam and an AuPd lift-off. The electrodes of the nanojunction are less than 100 nm in width and are buried in the SiO2 substrate. For the 8 nm nanojunctions, the gap is still filled with SiO2 if care is taken about the SiO2 etching step of the process.

引用

页码：1983 / 1989

页数：7

共 6 条

[1] OLIGOTHIOPHENES - YET LONGER - SYNTHESIS, CHARACTERIZATION, AND SCANNING-TUNNELING-MICROSCOPY IMAGES OF HOMOLOGOUS, ISOMERICALLY PURE OLIGO(ALKYLTHIOPHENE)S [J].