EFFECT OF DISTRIBUTED-GATE CONTROL ON CURRENT FILAMENTATION IN THYRISTORS

被引：18

作者：

GORBATYUK, AV

RODIN, PB

机构：

[1] A. F. Ioffe Institute, Leningrad

来源：

SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 09期

关键词：

D O I：

10.1016/0038-1101(92)90172-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spontaneous current filamentation in a thyristor with a planar distributed gate is described. The parameters of the filaments are assumed to depend on gate potential and have been estimated taking into account 2-D transport phenomena in the semiconductor structure. The theory permits systematic analysis of various controlled switching regimes of the device.

引用

页码：1359 / 1364

页数：6

共 12 条

[1]

BASS FG, 1970, ZH EKSP TEOR FIZ, V58, P1815

[2]

BONCHBRUEVICH VL, 1975, DOMAIN ELECTRICAL IN

[3]

GENTRY FE, 1964, SEMICONDUCTOR CONTRO

[4] FIELD-CONTROLLED THYRISTOR TURN-ON AS THE MOMENT OF LOSING STABILITY [J].