METALLIC IMPURITY CONDUCTION AND METAL-NONMETAL TRANSITION IN N-INSB AT LOW-TEMPERATURE

被引：8

作者：

MORITA, S

FUKASE, T

ISAWA, Y

ISHIDA, S

KOIKE, Y

TAKEUTI, Y

MIKOSHIBA, N

机构：

[1] TOHOKU UNIV,IRON STEEL & OTHER MET RES INST,SENDAI,MIYAGI 980,JAPAN

[2] OSAKA UNIV,FAC SCI,DEPT PHYS,OSAKA,JAPAN

来源：

PHYSICA B & C | 1981年 / 107卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(81)90516-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：421 / 422

页数：2

共 9 条

[1]

Altshuler B. L., 1979, Sov. Phys. JETP, V50, P968

[2] GALVANOMAGNETIC PROPERTIES OF N-TYPE INSB AT LOW-TEMPERATURES .1. LOCALIZATION OF CARRIERS AND METALLIC IMPURITY CONDUCTION UNDER ZERO AND WEAK MAGNETIC-FIELDS [J].

ISHIDA, S ;

OTSUKA, E .

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[3] SCATTERING OF ELECTRONS IN HEAVILY DOPED SEMICONDUCTORS [J].

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MATSUI, M ;

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[4] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .9. MINIMUM METALLIC CONDUCTIVITY [J].

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[5]

OOTSUKA Y, 1979, SOLID STATE COMMUN, V30, P169

[6] SHARP METAL-INSULATOR-TRANSITION IN A RANDOM SOLID [J].

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ANDRES, K ;

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BHATT, RN .

PHYSICAL REVIEW LETTERS, 1980, 45 (21) :1723-1726

[7]

ROSENBAUM TF, PREPRINT

[8] SCATTERING MECHANISMS IN HEAVILY DOPED SEMICONDUCTORS .1. MAXIMA IN RESISTIVITY AND HALL-COEFFICIENT [J].

SASO, T ;

KASUYA, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (05) :1566-1575

[9] ELECTRIC CONDUCTION IN PHOSPHORUS DOPED SILICON AT LOW TEMPERATURES [J].

YAMANOUCHI, C ;

MIZUGUCHI, K ;

SASAKI, W .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (03) :859-+

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