SCATTERING MECHANISMS IN HEAVILY DOPED SEMICONDUCTORS .1. MAXIMA IN RESISTIVITY AND HALL-COEFFICIENT

被引：29

作者：

SASO, T

KASUYA, T

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1980年 / 48卷 / 05期

关键词：

D O I：

10.1143/JPSJ.48.1566

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1566 / 1575

页数：10

共 28 条

[1]

Friedel J., 1958, NUOVO CIM, V7, P287, DOI DOI 10.1007/BF02751483

[2]

GENNES PGD, 1963, METALLIC SOLID SOLUT, pR6

[3] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J].

HERRING, C .

BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02) :237-290

[4] THE RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES [J].

HUNG, CS ;

GLIESSMAN, JR .

PHYSICAL REVIEW, 1950, 79 (04) :726-727

[5] THEORY OF RESISTIVITY AND HALL EFFECT AT VERY LOW TEMPERATURES [J].

HUNG, CS .

PHYSICAL REVIEW, 1950, 79 (04) :727-728

[6] ELECTRONIC-STRUCTURE OF HYDROGEN IN SIMPLE METALS [J].

JENA, P ;

SINGWI, KS .

PHYSICAL REVIEW B, 1978, 17 (09) :3518-3524

[7] LOW-TEMPERATURE DEPENDENCE OF ELECTRICAL RESISTIVITY OF DEGENERATE N-TYPE GERMANIUM [J].

KATZ, MJ ;

KOENIG, SH ;

LOPEZ, AA .

PHYSICAL REVIEW LETTERS, 1965, 15 (21) :828-&

[8] ELECTRICAL CONDUCTIVITY IN HEAVILY DOPED N-TYPE GERMANIUM - TEMPERATURE AND STRESS DEPENDENCE [J].

KATZ, MJ .

PHYSICAL REVIEW, 1965, 140 (4A) :1323-&

[9] DIELECTRIC ENHANCEMENT OF RESISTIVITY OF N-TYPE DEGENERATELY DOPED GERMANIUM AT LOW-TEMPERATURE [J].

KRIEGER, JB ;

MEEKS, T .

PHYSICAL REVIEW B, 1973, 8 (06) :2780-2785

[10] RESISTIVITY OF N-TYPE DEGENERATELY DOPED SILICON AT LOW-TEMPERATURE - DIELECTRIC-SCREENING EFFECTS [J].

KRIEGER, JB ;

GRUENEBAUM, J ;

MEEKS, T .

PHYSICAL REVIEW B, 1974, 9 (08) :3627-3629

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