SCATTERING MECHANISMS IN HEAVILY DOPED SEMICONDUCTORS .1. MAXIMA IN RESISTIVITY AND HALL-COEFFICIENT

被引:29
作者
SASO, T
KASUYA, T
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D O I
10.1143/JPSJ.48.1566
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:1566 / 1575
页数:10
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