CONDUCTIVITY IN ANISOTROPIC SEMICONDUCTORS - APPLICATION TO LONGITUDINAL RESISTIVITY AND HALL-EFFECT IN SATURATION-STRESSED DEGENERATELY DOPED N-TYPE GERMANIUM

被引：13

作者：

KRIEGER, JB

MEEKS, T

ESPOSITO, E

机构：

来源：

PHYSICAL REVIEW B | 1972年 / 5卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.5.1499

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1499 / &

共 13 条

[1]

BEER AC, 1963, GALVANOMAGNETIC EFFE, P103

[2]

Brooks H., 1955, ADV ELECT ELECT PHYS, V7, P85

[3]

ESPOSITO E, 1971, B AM PHYS SOC, V16, P652

[4] LOW-TEMPERATURE DEPENDENCE OF ELECTRICAL RESISTIVITY OF DEGENERATE N-TYPE GERMANIUM [J].

KATZ, MJ ;

KOENIG, SH ;

LOPEZ, AA .

PHYSICAL REVIEW LETTERS, 1965, 15 (21) :828-&

[5] ELECTRICAL CONDUCTIVITY IN HEAVILY DOPED N-TYPE GERMANIUM - TEMPERATURE AND STRESS DEPENDENCE [J].

KATZ, MJ .

PHYSICAL REVIEW, 1965, 140 (4A) :1323-&

[6] LOW-TEMPERATURE TRANSVERSE RESISTIVITY OF SATURATION-STRESSED DEGENERATELY DOPED N-TYPE GERMANIUM [J].

KRIEGER, JB ;

MEEKS, T ;

ESPOSITO, E .

PHYSICAL REVIEW B, 1971, 3 (04) :1262-&

[7] TEMPERATURE DEPENDENCE OF RESISTIVITY OF DEGENERATELY DOPED SEMICONDUCTORS AT LOW TEMPERATURES [J].

MEEKS, T ;

KRIEGER, JB .

PHYSICAL REVIEW, 1969, 185 (03) :1068-+

[8] QUANTUM-TRANSPORT THEORIES AND MULTIPLE SCATTERING IN DOPED SEMICONDUCTORS .2. MOBILITY OF N-TYPE GALLIUM ARSENIDE [J].

MOORE, EJ .

PHYSICAL REVIEW, 1967, 160 (03) :618-&

[9] QUANTUM-TRANSPORT THEORIES AND MULTIPLE SCATTERING IN DOPED SEMICONDUCTORS .I. FORMAL THEORY [J].

MOORE, EJ .

PHYSICAL REVIEW, 1967, 160 (03) :607-&

[10] QUANTUM TRANSPORT THEORY OF N-TYPE SEMICONDUCTORS (GAAS) [J].

MOORE, EJ ;

EHRENREICH, H .

SOLID STATE COMMUNICATIONS, 1966, 4 (08) :407-+

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