ELECTRICAL CONDUCTIVITY IN HEAVILY DOPED N-TYPE GERMANIUM - TEMPERATURE AND STRESS DEPENDENCE

被引：57

作者：

KATZ, MJ

机构：

来源：

PHYSICAL REVIEW | 1965年 / 140卷 / 4A期

关键词：

D O I：

10.1103/PhysRev.140.A1323

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：1323 / &

相关论文

共 63 条

[1] Hall effect and conductivity of cuprous oxide
Angello, SJ
[J]. PHYSICAL REVIEW, 1942, 62 (7/8): : 371 - 377
[2] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS
CONWELL, E
WEISSKOPF, VF
[J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390
[3] CONWELL E, 1946, PHYS REV, V69, P258
[4] CSAVINSKY P, 1964, PHYS REV, V135, pAB3
[5] EFFECT OF IMPURITY-CORE ON CARRIER MOBILITY IN HEAVILY DOPED GERMANIUM
CSAVINSZKY, P
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (10) : 1865 - &
[6] TREATMENT OF IONIZED IMPURITY SCATTERING IN DEGENERATE SEMICONDUCTORS - COMBINATION OF VARIATIONAL AND PERTURBATIONAL TECHNIQUE IN PARTIAL-WAVE METHOD
CSAVINSZKY, P
[J]. PHYSICAL REVIEW, 1963, 131 (05): : 2033 - &
[7] TREATMENT OF IONIZED IMPURITY SCATTERING IN DEGENERATE SEMICONDUCTORS - APPLICATION OF VARIATIONAL TECHNIQUE IN PARTIAL-WAVE METHOD
CSAVINSZKY, P
[J]. PHYSICAL REVIEW, 1962, 126 (04): : 1436 - &
[8] HIGH-STRESS PIEZORESISTANCE IN DEGENERATE ARSENIC-DOPED GERMANIUM
CUEVAS, M
FRITZSCH.H
[J]. PHYSICAL REVIEW, 1965, 139 (5A): : 1628 - &
[9] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM
DEBYE, PP
CONWELL, EM
[J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706
[10] DINGLE RB, 1955, PHILOS MAG, V46, P831

← 1 2 3 4 5 6 7 →