RESISTIVITY OF N-TYPE DEGENERATELY DOPED SILICON AT LOW-TEMPERATURE - DIELECTRIC-SCREENING EFFECTS

被引：14

作者：

KRIEGER, JB

GRUENEBAUM, J

MEEKS, T

机构：

[1] CITY UNIV NEW YORK, BROOKLYN COLL, DEPT PHYS, BROOKLYN, NY 11210 USA

[2] CITY UNIV NEW YORK, KINGSBOROUGH COMMUNITY COLL, DEPT PHYS SCI, BROOKLYN, NY 11235 USA

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.9.3627

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3627 / 3629

页数：3

共 11 条

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[7] QUANTUM-TRANSPORT THEORIES AND MULTIPLE SCATTERING IN DOPED SEMICONDUCTORS .2. MOBILITY OF N-TYPE GALLIUM ARSENIDE [J].

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[10]

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