INJECTION-LASERS

被引：20

作者：

GRIBKOVSKII, VP ^{[1
]}

机构：

[1] BI STEPANOV INST PHYS, MINSK 220072, BELARUS

来源：

PROGRESS IN QUANTUM ELECTRONICS | 1995年 / 19卷 / 01期

关键词：

D O I：

10.1016/0079-6727(94)E0005-I

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：41 / 88

页数：48

共 214 条

[51]

Dolginov, Druzhinina, Eliseev, Lapshin, Milvidskii, Sverdlov, Injection heterolaser based on InGaAsSb four-component solid solution, Soviet Journal of Quantum Electronics, 8, (1978)

[52]

Shotov, Davarashvili, Babushkin, Pis'ma Zh. Tekh. Fiz., 5, (1978)

[53]

Karczewski, Kowalczyk, Szczerbakow, Solid St. Commun., 38, (1981)

[54]

Asahi, Kawamura, Nagai, J. Appl. Phys., 54, (1983)

[55]

Tsang, Olsson, Appl. Phys. Lett., 42, (1983)

[56]

Tsang, Olsson, Appl. Phys. Lett., 43, (1983)

[57]

Partin, Appl. Phys. Lett., 43, (1983)

[58]

Akiba, Matsuchima, Iketani, Usami, Electron. Lett., 24, (1988)

[59]

Koguchi, Takahashi, Kiyosawa, New Quaternary Semiconductor Material Pb1-xMnxS1-ySeyfor Mid-IR Lasers, Japanese Journal of Applied Physics, 27, (1988)

[60]

Koguchi, Kiyosawa, Takahashi, Jpn. J. Appl. Phys., 28, (1989)

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