TUNING BAND OFFSETS AT SEMICONDUCTOR INTERFACES BY INTRALAYER DEPOSITION

被引：100

作者：

PERESSI, M

BARONI, S

RESTA, R

BALDERESCHI, A

机构：

[1] PHB ECUBLENS,INST ROMAND RECH NUMER PHYS MAT,CH-1015 LAUSANNE,SWITZERLAND

[2] UNIV TRIESTE,DIPARTIMENTO FIS TEOR,I-34014 TRIESTE,ITALY

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.43.7347

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Band offsets can be modified at semiconductor heterojunctions or created at homojunctions by depositing thin intralayers of group-IV atoms at III-V/III-V polar interfaces. We present here a theoretical study of Si and Ge intralayers deposited along (001) at GaAs and AlAs homojunctions, and at GaAs/AlAs heterojunctions. Our results show that the offset is very sensitive to the coverage and abruptness of the intralayer. A comparison with recent experiments for Si in GaAs/AlAs suggests that Si atoms are confined over two atomic planes for coverages lower than about 0.5 monolayers, whereas for higher coverages Si diffusion occurs.

引用

页码：7347 / 7351

页数：5

共 15 条

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[2]

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