SEMICONDUCTOR RAMAN LASER

被引:117
作者
NISHIZAWA, J
SUTO, K
机构
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D O I
10.1063/1.328012
中图分类号
O59 [应用物理学];
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页码:2429 / 2431
页数:3
相关论文
共 14 条
[1]   SELECTION OF RAMAN LASER MATERIALS [J].
ECKHARDT, G .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1966, QE 2 (01) :1-+
[2]   MIXING OF VISIBLE AND NEAR-RESONANCE INFRARED LIGHT IN GAP [J].
FAUST, WL ;
HENRY, CH .
PHYSICAL REVIEW LETTERS, 1966, 17 (25) :1265-&
[3]   A TUNABLE STIMULATED RAMAN OSCILLATOR [J].
GELBWACH.J ;
PANTELL, RH ;
PUTHOFF, HE ;
YARBOROU.JM .
APPLIED PHYSICS LETTERS, 1969, 14 (09) :258-&
[4]   GENERATION OF HIGH-FREQUENCY ULTRASONIC WAVES BY GUNN EFFECT [J].
HAYAKAWA, H ;
ISHIGURO, T ;
TAKADA, S ;
MIKOSHIB.N ;
KIKUCHI, M .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (12) :4755-&
[5]   RAMAN SCATTERING BY POLARITONS [J].
HENRY, CH ;
HOPFIELD, JJ .
PHYSICAL REVIEW LETTERS, 1965, 15 (25) :964-&
[7]  
NISHIZAWA J, Patent No. 8444479
[8]  
NISHIZAWA J, 1971, GAZO GIJUTSU, V2, P13
[9]  
NISHIZAWA J, 1963, DENSHI KAGAKU, V13, P4
[10]   GAAS TUNNETT DIODES [J].
NISHIZAWA, JI ;
OKUNO, Y ;
MOTOYA, K .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1978, 26 (12) :1029-1035