IMPROVED BOAT FOR MULTIPLE-BIN LIQUID-PHASE EPITAXY

被引：12

作者：

VANOIRSCHOT, TG ^{[1
]}

NIJMAN, W ^{[1
]}

机构：

[1] PHILIPS RES LABS, EINDHOVEN, NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1973年 / 20卷 / 04期

关键词：

D O I：

10.1016/0022-0248(73)90094-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：301 / 305

页数：5

共 17 条

[1]

ANDRE E, 1970, Patent No. 1600341

[2] LIQUID PHASE EPITAXY OF ALXGA1-XAS FOR MONOLITHIC PLANAR STRUCTURES [J].

BLUM, JM ;

SHIH, KK .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10) :1498-&

[3] GROWTH OF UNIFORM EPITAXIAL LAYERS BY LIQUID-PHASE-EPITAXIAL METHOD [J].

BLUM, JM ;

SHIH, KK .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1394-&

[4]

Donahue J. A., 1970, Journal of Crystal Growth, V7, P221, DOI 10.1016/0022-0248(70)90014-X

[5]

Frank G., 1973, Acta Electronica, V16, P237

[6] SOLUBILITY OF III-V COMPOUND SEMICONDUCTORS IN COLUMN-III LIQUIDS [J].

HALL, RN .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) :385-388

[7] JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE [J].

HAYASHI, I ;

PANISH, MB ;

FOY, PW ;

SUMSKI, S .

APPLIED PHYSICS LETTERS, 1970, 17 (03) :109-&

[8]

ILEGEMS M, 1969, 2 P INT S GAAS, P3

[9] LARGE-OPTICAL-CAVITY (A1GA)AS-GAAS HETEROJUNCTION LASER DIODE - THRESHOLD AND EFFICIENCY [J].

KRESSEL, H ;

HAWRYLO, FZ ;

LOCKWOOD, HF .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :561-+

[10] THIN SOLUTION MULTIPLE LAYER EPITAXY [J].

LOCKWOOD, HF ;

ETTENBERG, M .

JOURNAL OF CRYSTAL GROWTH, 1972, 15 (01) :81-+

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