EQUIVALENT-CIRCUIT FOR ION-IMPLANTED COUNTER-DOPED LAYERS AS DETERMINED BY MOS ADMITTANCE AND CROSSTALK MEASUREMENTS

被引：5

作者：

BACH, HG ^{[1
]}

FAHRNER, WR ^{[1
]}

BRAUNIG, D ^{[1
]}

机构：

[1] HAHN MEITNER INST NUCL RES,DEPT DATA PROCESSING & ELECTR,BERLIN,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 68卷 / 02期

关键词：

D O I：

10.1002/pssa.2210680230

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：589 / 601

页数：13

共 5 条

[1]

BACH HG, UNPUB IEEE T ELECTRO

CAUGHEY, DM ;

THOMAS, RE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+

[3] CHARACTERIZATION OF MOS STRUCTURES WITH BURIED LAYERS [J].

FAHRNER, WR ;

KLAUSMANN, E .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 50 (02) :433-444

LEHOVEC, K .

NICOLLIAN, EH ;

GOETZBERGER, A .