TRANSRESISTANCE AND CURRENT GAIN OF HIGH-T(C) FLUX-FLOW TRANSISTORS

被引：23

作者：

MIYAHARA, K

KUBO, S

SUZUKI, M

机构：

[1] NTT Interdisciplinary Research Laboratories, 162 Tokai

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 08期

关键词：

D O I：

10.1063/1.357248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transresistance and current gain of high-T(c) flux flow transistors were investigated phenomenologically and experimentally in relation to the flux flow characteristics of the devices. It was shown that the transresistance was in proportion to the vortex flow velocity, the channel width, and the magnetic coupling coefficient between the channel and the control current line. The devices were fabricated from thin films of coevaporated NdCeCuO, and the control current dependence of their transresistance was measured. It was found that the transresistance peak appeared at a high control current level that corresponded to the saturation of the flow voltage. The peak value of the transresistance was 1.25 OMEGA. The flow voltage saturation mechanism is discussed in relation to the channel etching of the devices.

引用

收藏

页码：4772 / 4775

页数：4

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