CLOSE-SPACED GROWTH OF DEGENERATED P-TYPE GAAS GAP AND GA(ASX P1-X) BY ZNCL2 TRANSPORT FOR TUNNEL DIODES

被引：18

作者：

HOSS, PA

MURRAY, LA

RIVERA, JJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1968年 / 115卷 / 05期

关键词：

D O I：

10.1149/1.2411328

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：553 / &

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